sot-89-3l 1. base 2. collector 3. emitter features z small flat package z general purpose application maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =0.1ma,i e =0 100 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 80 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 5 v collector cut-off current i cbo v cb =80v,i e =0 1 a emitter cut-off current i ebo v eb =4v,i c =0 1 a dc current gain h fe v ce =3v, i c =500ma 70 400 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =20ma 0.4 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 20 pf transition frequency f t v ce =10v,i c =50ma, f=100mhz 100 mhz classification of h fe rank o y gr range 70 C 140 120 C 240 200 C 400 marking zo zy zg symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current 1 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 KTD1898 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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